Transistor de efecto de campo
(31)
el transistor del canal N de 60V TO-263, TO-220 avanzó el transistor de efecto de campo del poder
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
60V TO-263 n channel transistor TO-220 advanced power field effect transistor Mosfet n channel features: FET Type:N-Channel Enhancement mode Very low on-resistance Flexible and very practical High switching capability 100% Avalanche Tested before sending to customers Pb-free lead plating; RoHS compl... Ver más
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Aprobación horizontal del transistor de poder más elevado de la salida del Mosfet de P SOT323 3D 3H 3M RoHS
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor TYPE NUMBERMARKING CODE: BC856W: 3D* BC856AW: 3A* BC856BW: 3B* BC857W: 3H* BC857AW: 3E* BC857BW: 3F* BC857CW: 3G* BC858W: 3M* Field effect transistor features: Low current(max.100mA) Low voltage(max.65V) base-emitter volta... Ver más
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1MHz SOP8 LM358 LM358DR SMD en el amplificador del agujero
Precio: Negotiated
MOQ: 3000pcs
El tiempo de entrega: 10-15 days
Marca: CANYI
Destacar:LM358DR SMD Throught Hole Amplifier, SOP8 SMD Throught Hole Amplifier, 1MHz Power Field Effect Transistor
LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 LM358DR SMD Amplifier dual operational amplifiers SOP8 LM358 Features Available in 8-Bump micro SMD chip sized package,(See AN-1112) Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Wide bandwidth (unity gain):... Ver más
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Transistor de poder del Mosfet de TO-92 600mA 625mW NPN MPS2222A MPS2222 2222A
Precio: Negotiated
MOQ: 3000pcs
El tiempo de entrega: 10-15 days
Marca: CANYI
Destacar:625mW NPN Mosfet Power Transistor, 600mA NPN Mosfet Power Transistor, MPS2222A Transistor
MPS2222A MPS2222 2222A TO-92 NPN mosfet power transistor Choose Canyi to get more benefit: Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi Competitive price and save your time Over 10 years work experience technical service team Mix order accepted and free sample Our fast delivery t... Ver más
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Reguladores de voltaje positivos de L7805CV TO-220 L7805 7805 1.5A 5V
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 10-15 days
Marca: CANYI
Destacar:L7805CV Positive Voltage Regulators, 1.5A 5V Positive Voltage Regulators, TO-220 Through Hole Voltage Regulator
L7805CV voltage regulator TO-220 L7805 7805 5V POSITIVE VOLTAGE REGULATORS Features Output current to 1.5 A Output voltage of 5V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7805CV of three-terminal positive regulators is available in TO-220 ... Ver más
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Regulador de voltaje positivo de L7812CV L7812 KA7812 MC7812 12V 1A/1.5A
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 10-15 days
Marca: CANYI
Destacar:MC7812 Positive Voltage Regulator, KA7812 Positive Voltage Regulator, L7812CV Through Hole Voltage Regulator
L7812CV L7812 KA7812 MC7812 Voltage Regulator 12V 1A/1.5A TO-220 Feature summary Output current to 1.5A Output voltages of 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V Thermal overload protection Short circuit protection Output transition SOA protection Description The L7800 series of three-terminal po... Ver más
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Convertidores de la CA DC de VIPER22A VIPER22 AP8022 DIP-8 60KHZ
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 10-15 days
Marca: CANYI
Destacar:60KHZ AC DC Converters, VIPER22A AC DC Converters, VIPER22 Through Hole Transistor
VIPER22A VIPER22 AP8022 DIP-8 In Stock FEATURE Fixed 60KHZ switching frequency 9V to 38V wide range VDD voltage current mode control auxilary undervoltage lockout with hysteresis high voltage start up current source overtemperature, overcurrent and overvoltage protection with aytorestart. DESCRIPTIO... Ver más
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Paquete del MOSFET NCE30H10K TO-252 del poder del modo del aumento del canal N del NCE
Precio: usd 0.2/pcs
MOQ: 2500PCS
El tiempo de entrega: 3-5 days
Marca: NCE
Destacar:NCE N Channel MOSFET, NCE30H10K Surface Mount MOSFET, TO-252 Surface Mount MOSFET
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor N channel transistor featuresVDS =30V,ID =100ARDS(ON) Ver más
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transistor de efecto de campo 800V/Mosfet ITO220 del transistor 3N80 del canal N
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
800V n channel transistor 3N80 mosfet ITO220 field effect transistor 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching capability Avala... Ver más
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Canal N TO-220 del transistor de efecto de campo de la alta precisión 3N80 3A 800V/del Mosfet del poder
Precio: Negotiated
MOQ: Negotiable
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:high power transistor, p channel transistor
High precision 3N80 3A 800V Field Effect Transistor/ Power Mosfet N-Channel TO-220 20~40V 40V 55-60V 65-95V 100-150V 200-500V 600V 650V 700-900V MOSFET High power transistor features: Excellent package for good heat dissipation Ultra low gate charge Low reverse transfer capacitance Fast switching ca... Ver más
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MOSFET del poder del modo del aumento del triodo del canal del transistor de efecto de campo MX2301 P
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: DEC
Destacar:mosfet power transistor, high power transistor
Electronic Components A1SHB Transistor 2301 -20V -2.8A SOT-23 P-Channel Product Description The MX2301A uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ... Ver más
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Soporte de la superficie del tubo del MOS del transistor de efecto de campo de los componentes electrónicos MX3401 -30V VDS
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: DEC
Destacar:high power transistor, p channel transistor
electronic components MX3401 transistor -30V -4.2A SOT-23-3L P-channel Description The MX3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Shenzh... Ver más
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Diseño de alta densidad dual de la célula del transistor de efecto de campo del canal N MXN3312 para la transferencia del poder
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: DEC
Destacar:mosfet power transistor, p channel transistor
MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. High density cell design fo ultra low Rdson F... Ver más
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Transistor de poder más elevado superficial del soporte MX3407 P - el tipo de canal RoHS certificó
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 1 - 2 Weeks
Marca: DEC
Destacar:mosfet power transistor, high power transistor
Electronic Components MX3407 Field Effect Transistor P Channel In Stock Product Description High power and current handing capability Lead free product is acquired Surface mount package Our Advantage: 1. Electronic component specialist and professional. 2. Strong R & D team, experienced research... Ver más
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Paquete de la original del MOSFET 2A 600V TO-220F del transistor del canal N de FQPF2N60C FQPF2N60 2N60
Precio: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: Canyi
Destacar:mosfet power transistor, high power transistor
FQPF2N60C FQPF2N60 2N60 MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package Features:1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 VLow gate charge ( typical 9.0 nC)Low Crss ( typical 5.0 pF)Fast switching100% avalanche testedImproved dv/dt capabilitGeneral Descriptio... Ver más
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Modo del aumento del canal del transistor de poder más elevado del MOS de los FETs SOT-23 de los MOSFETs SI2301 2.5A 20V A1SHB P
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features:Advanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMaximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)ParameterSymbolLimitUnitDr... Ver más
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Transistor del canal N del MOSFET A09T del transistor de poder del mosfet de AO3400 SOT-23 NPN
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V Current - Continuous Drain (Id) 25°C5.8A (Ta) Driv... Ver más
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Transistores de efecto de campo del Mosfet del canal N 10N60 600V para las fuentes de alimentación cambiadas del modo
Precio: US$ 0.1-0.19 per unit (Pieces)
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: Canyi
Destacar:mosfet power transistor, high power transistor
10N60 600V n channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche te... Ver más
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Componente electrónico AP70N03NF del Mosfet SMD del transistor del canal N del circuito integrado
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
AP70N03NF.pdfAP70N03NF Transistor MOSFET SMD N-Channel Electronic Component for Integrated Circuit Description The AP70N03NF uses advanced trench technology to provide excellent RDS(ON), low gate 6][charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery ... Ver más
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Canal N del MOSFET SMD del transistor de efecto de campo del poder de AP85N03NF con el interruptor de la carga
Precio: Negotiated
MOQ: 1000PCS
El tiempo de entrega: 3-5 days
Marca: CANYI
Destacar:mosfet power transistor, high power transistor
AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other S... Ver más
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