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IC de memoria flash
(362)
Microprocesador de memoria Flash superficial del soporte 64Kbit, CAT28C64BG-12T IC de destello EEPROM
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: onsemi
Destacar:Surface Mount Flash Memory Chip, Flash Memory Chip 64Kbit, CAT28C64BG-12T Flash IC EEPROM
CAT28C64BG-12T IC EEPROM 64KBIT PARALLEL 32PLCC onsemi Product Details DESCRIPTION The CAT28C64B is a fast, low power, 5V-only CMOS Parallel EEPROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-c... Ver más
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DS3065W-100# IC NVSRAM 8MBIT PARALLEL 256BGA Analog Devices Inc./Maxim Integrado
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Analog Devices Inc./Maxim Integrated
Product Details Based on more than 30 years of ceramic and ferrite technology experience, Murata Electronics’ full range of leaded EMI filters have been designed to meet today’s electronic industry requirements. Murata’s leaded devices consist of ferrite bead inductors, feed-thru capacitors, 3 termi... Ver más
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MR4A16BYS35 IC RAM 16MBIT PARALÉL 54TSOP2 Everspin Technologies Inc. y sus subsidiarios
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Everspin Technologies Inc.
Product Details MR3 Reflector Lamp Assemblies MR4 Reflector Lamp Assemblies MR6 Reflector Lamp Assemblies Adjustable Focus Reflector Assemblies Specifications Attribute Attribute Value Manufacturer Everspin Product Category Memory ICs Series MR4A16B Packaging Tray Alternate Packaging Mounting-Style ... Ver más
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M29F800FB5AN6E2 IC FLASH 8MBIT PARALLEL 48TSOP I Alliance Memory, Inc. Se trata de un sistema de memoria de circuito integrado que tiene una capacidad de almacenamiento de 8 MBIT.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Alliance Memory, Inc.
Product Details General Description This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the ... Ver más
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R1LV1616RSD-7SI#B0 IC SRAM 16MBIT PAR 52TSOP II Renesas Electronic America Inc. y sus subsidiarias
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Renesas Electronics America Inc
Specifications Attribute Attribute Value Manufacturer Renesas Electronics America Product Category Memory ICs Series - Packaging Tray Package-Case 52-TFSOP (0.350", 8.89mm Width) Operating-Temperature -40°C ~ 85°C (TA) Interface Parallel Voltage-Supply 2.7 V ~ 3.6 V Supplier-Device-Package 52-T... Ver más
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MTFC32GAPALNA-AAT IC FLASH 256GBIT MMC 100TBGA Micron Technology Inc. y sus subsidiarios
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Micron Technology Inc.
Specifications Attribute Attribute Value Manufacturer Micron Technology Inc. Product Category Resonators Mfr Micron Technology Inc． Series e•MMC™ Package Tray Product-Status Last Time Buy Memory-Type Non-Volatile Memory-Format FLASH Technology FLASH - NAND Memory-Size 256Gb (32G x 8) Memory-Interfac... Ver más
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MTFC16GJUEF-AIT TR IC FLASH 128GBIT MMC 169TFBGA Micron Technology Inc. y sus subsidiarios
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Micron Technology Inc.
Product Details [Jauch Quartz GmbH] Tuning Fork Quartz Crystal Features ■ three different package versions ■ surface mount version available Specifications Attribute Attribute Value Manufacturer Micron Technology Inc. Product Category Memory ICs Series e‧MMC Packaging Tape & Reel (TR) Package-Ca... Ver más
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IS61WV5128BLL-10BLI IC SRAM 4MBIT PARALLEL 36TFBGA ISSI, Solución de Silicio Integrado Inc.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION TheISSIIS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields hi... Ver más
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IS62WV102416EBLL-45BLI IC SRAM 16MBIT PARALLEL 48VFBGA ISSI, Solución de silicio integrado Inc.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields hi... Ver más
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IS63WV1024BLL-12TLI IC SRAM 1MBIT PARALLEL 32TSOP II ISSI, Solución de silicio integrado Inc.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION The ICSI IS63LV1024 is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, y... Ver más
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IS61C3216AL-12KLI-TR IC SRAM 512KBIT PARALLEL 44SOJ ISSI, Solución de silicio integrado Inc.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: ISSI, Integrated Silicon Solution Inc
Product Details DESCRIPTION The ISSI IS61C3216AL is high-speed, 512Kb static RAMs organized as 32,768 words by 16 bits. They are fabricated usingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 n... Ver más
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IS43R32400E-5BL-TR IC DRAM 128MBIT PAR 144LFBGA ISSI, Solución de silicio integrado Inc.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: ISSI, Integrated Silicon Solution Inc
Product Details FEATURES ● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V ● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V ● High speed data transfer rates with system frequency up to 933 MHz ● 8 internal banks for concurrent operation ● 8n-bit pre-fetch architec... Ver más
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AT25128T2-10TI-1.8 IC EEPROM 128KBIT SPI 20TSSOP Tecnología de microchip
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Microchip Technology
Product Details Description The AT25128 provides 131,072 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 16,384 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are ... Ver más
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IDT70T3319S133DD IC SRAM 4.5MBIT PARALLEL 144TQFP Renesas Electronics America Inc. y sus subsidiarias
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Renesas Electronics America Inc
Product Details Description The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MAS TER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE... Ver más
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AT26DF161A-MU IC FLASH 16MBIT SPI 70MHZ 8VDFN Renesas Design Alemania GmbH
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Renesas Design Germany GmbH
Product Details Description The AT26DF161A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the A... Ver más
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BQ4010MA-85 IC NVSRAM 64KBIT PARALLEL 28DIP Texas Instruments también está disponible en el mercado.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Texas Instruments
Product Details Description/ FeaturesThe 10BQ040 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, free-wheeling diodes, battery chargi... Ver más
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AS4C4M32S-7BCN IC DRAM 128MBIT PAR 90TFBGA Alliance Memory, Inc. Se trata de un sistema de almacenamiento de datos basado en la memoria de la Unión.
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Alliance Memory, Inc.
Specifications Attribute Attribute Value Manufacturer Alliance Memory, Inc. Product Category Memory ICs Series - Packaging Tray Alternate Packaging Package-Case 90-LFBGA Operating-Temperature 0°C ~ 70°C (TA) Interface Parallel Voltage-Supply 3 V ~ 3.6 V Supplier-Device-Package 90-TFBGA (8x13) Memory... Ver más
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R1EX25008ATA00I#S0 IC EEPROM 8KBIT SPI 5MHZ 8TSSOP Renesas Electronic America Inc. y sus subsidiarias
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Renesas Electronics America Inc
Product Details FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mounted applications ♦ Super fast switching for high efficiency ♦ Low reverse leakage ♦ Built-in strain relief,ideal for automated placement ♦ High forward surge current cap... Ver más
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M95160-RMB6TG IC EEPROM 16KBIT SPI 8UFDFPN STMicroelectrónica
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: STMicroelectronics
Product Details SUMMARY DESCRIPTIONThese electrically erasable programmable memory (EEPROM) devices are accessed by a high speed SPI-compatible bus. The memory array is organized as 2048 x 8 bit (M95160), and 1024 x 8 bit (M95080). FEATURES SUMMARY■ Compatible with SPI Bus Serial Interface (Positive... Ver más
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71V546S100PFG IC SRAM 4.5MBIT PAR 100TQFP Renesas Electronics America Inc. y sus subsidiarias
Precio: Based on current price
MOQ: 1
El tiempo de entrega: 3-5 work days
Marca: Renesas Electronics America Inc
Product Details DESCRIPTION: The IDT71V509 is a 3.3V high-speed 1,024,576-bit synchronous SRAM organized as 128K x 8. It is designed to eliminate dead cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBT, or Zero Bus Turnaround™. FEA... Ver más
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