Semiconductor de alta potencia
(27)
Baja filtración Baja capacidad de unión Alta temperatura Resistencia Voltagem Canal N Semiconductor de potencia
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Marca: Lingxun
Product Description: Our High Voltage Power Semiconductors are characterized by their High Light, Rapid Switching Capabilities, and Robust Thermal Management. They are built to withstand extreme conditions, making them ideal for use in demanding environments that require High-temperature Resistance.... Ver más
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Aplicación múltiple Semiconductor de alta potencia Canal N
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El tiempo de entrega: 2-30days(Depends on the quantity of the order)
Marca: LX
Multi-occasion application High Power Semiconductor N Channel Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness APPLICATIONS • Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-DC Power... Ver más
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Tensión de baja capacidad de unión IGBT para temperatura con baja fuga
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Marca: Lingxun
Product Description:The High Power Semiconductor is particularly useful in charging pile applications for electric vehicles, where high voltage power IGBT is required for efficient energy transfer. With its high efficiency, the High Power Semiconductor is ideal for charging pile applications as it e... Ver más
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Baja capacidad de unión potencia N canal semiconductor
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Marca: Lingxun
Product Description: One of the most significant benefits of high voltage power semiconductors is their ability to handle high voltages and currents efficiently. They are ideal for use in high voltage power supplies, power tools, air purifiers, and other applications that require high voltage discre... Ver más
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Resistencia a altas temperaturas Baja fuga N Tipo MOSFET de baja capacidad de unión para eficiencia energética avanzada
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Marca: Lingxun
Product Description: One of the key features of High Voltage Power Semiconductors is their ability to handle high voltages and currents efficiently. This makes them essential components in power generation and distribution systems, where they help to improve energy efficiency and reduce waste. They ... Ver más
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Discreto de baja fuga de alta potencia dispositivos semiconductores Mejorado la eficiencia energética
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Marca: Lingxun
Destacar:High Power Semiconductor Discrete Devices, Low Leakage Power Semiconductor, Power Semiconductor Discrete Devices
Product Description: With its high voltage capacity, this High Power Semiconductor product can handle high voltage applications with ease. It is also designed with low junction capacitance, which makes it efficient in high-frequency operations. This product has been engineered to provide high effici... Ver más
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Semiconductor de alta potencia de conmutación baja 15A 650V 238mΩ para convertidores CC-DC
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:Low Switching High Power Semiconductor, High Power Semiconductor 15A, High Power Semiconductor 650V
15A 650V 238mΩ Low Switching High Power Semiconductor For DC-DC Converters N-channel Super Junction MOSFET Part No.:LC65R280D Package:TO-252 MAIN CHARACTERISTICS ID:15A VDSS:650V RDSON-typ VGS=10V:238mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conducti... Ver más
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Semiconductor de alta tensión tipo N de alta potencia con baja fuga
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Marca: Lingxun
Destacar:N Type High Power Semiconductor, Low Leakage High Power Semiconductor, N Type High Voltage Semiconductor
Product Description: Temperature Resistance Voltage Low Junction Capacitance Low Leakage N Power Semiconductor With low leakage and low junction capacitance, this N-type semiconductor is optimized for high voltage applications. Its ability to handle high voltages and currents makes it ideal for use ... Ver más
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MOSFET de potencia con resistencia a altas temperaturas, baja fuga y baja capacidad de unión
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Marca: Lingxun
Product Description: High Efficiency is a crucial attribute for high-power electronic systems, and our product is designed to deliver it. It ensures that the system operates optimally, with minimal energy loss, which translates to reduced energy costs. The product's high efficiency makes it an ideal... Ver más
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N Semiconductor de alto voltaje TO-251 con mejor rendimiento térmico
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Marca: Lingxun
Destacar:High Voltage Semiconductor TO-251, N High Voltage Semiconductor, Thermal High Voltage Semiconductor
Product Description: N Power Semiconductor With Enhanced Thermal And Leakage Performance The High Power Semiconductor is designed to provide high reliability and durability, making it a perfect fit for various applications, such as hairdryers, where high power and efficiency are required. Its high t... Ver más
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MOSFET de alta potencia con baja fuga de N canales TO-220F TO-263C TO-247AC
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Marca: Lingxun
Destacar:N Channel High Power MOS, High Power MOSFET TO-247AC, TO-263C High Power MOSFET
Product Description: Voltage Low Leakage Power MOSFET The N type High Power Semiconductor is a type of semiconductor that features low leakage and high-temperature resistance. Its ability to resist high temperatures makes it suitable for use in harsh environments. The device is designed to handle hi... Ver más
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IGBT de baja fuga de N canales de alta potencia para aplicaciones industriales
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Marca: Lingxun
Destacar:N High Power IGBT, Industrial High Power IGBT, Industrial N Channel IGBT
Product Description: Low Leakage Voltage Power IGBT For Industrial Applications High voltage power IGBT, High voltage power cool mos, and high voltage discrete devices are some of the key attributes of this product. Its ability to handle high voltages and currents efficiently, with rapid switching c... Ver más
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Semiconductores de alta potencia de canal N con baja fugas y baja capacidad de unión
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Marca: Lingxun
Destacar:N Channel High Power Semiconductors, Low Leakage High Power Semiconductors, Low Junction Capacitance Power Semiconductors
Product Description:N Channel Voltage Low Leakage Low Junction Capacitance High Temperature Resistance Power SemiconductorOur High Power Semiconductor product is of type N, which is known for its robustness and durability. With its low junction capacitance, it can help reduce power losses and enhanc... Ver más
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Diseño de tipo N Semiconductor de alta potencia TO-220F con capacidades de conmutación rápida
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Marca: Lingxun
Destacar:N Type Design Power Semiconductor, Rapid Switching High Power Semiconductor, TO-220F High Power Semiconductor
Product Description: Voltage N Channel High Temperature Resistant Low Leakage Low Junction Capacitance Power Semiconductor The High Power Semiconductor is a powerful product that is designed for a wide range of applications. This product is known for its low junction capacitance and N-type design, w... Ver más
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11A 650V 340mΩ TO-252 MOSFET de alta potencia para el cargador de conmutación
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:TO-252 High Power MOSFET, Switching Charger High Power MOSFET, 650V High Power MOSFET
11A 650V 340mΩ TO-252 High Power MOSFET For Switching Charger N-channel Super Junction MOSFET Part No.:LC65R380D Package:TO-252 MAIN CHARACTERISTICS ID:11A VDSS:650V RDSON-typ VGS=10V:340mΩ FEATURES • Adopt advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g... Ver más
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TO-220F Transistores de efecto de campo de óxido metálico semiconductor 15A 600V 274mΩ
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:Metal Oxide Semiconductor Field Effect Transistors, TO-220F Metal Oxide Semiconductor, Field Effect Transistors 15A
15A 600V 274mΩ TO-220F Metal-Oxide-Semiconductor Field-Effect Transistors N-channel Super Junction MOSFET Part No.:LC60R280F Package:TO-220F MAIN CHARACTERISTICS ID:15A VDSS:600V RDSON-typ VGS=10V:274mΩ FEATURES • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conducti... Ver más
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19A 600V 160mΩ Semiconductor de alta potencia para fuentes de alimentación industriales
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:600V High Power Semiconductor, 19A High Power Semiconductor, 160mΩ High Power Semiconductor
19A 600V 160mΩ Reduced Switching High Power Semiconductor For Industrial Power Supplies N-channel Super Junction MOSFET Part No.:LC60R190D Package:TO-220F MAIN CHARACTERISTICS ID:19A VDSS:600V RDSON-typ VGS=10V:160mΩ FEATURES • Reduced Switching & Conduction Losses • Fast Recovery Body-Diode • L... Ver más
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20A 650V 150mΩ MOS frío para fuentes de alimentación de modo conmutado
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:20A Cool MOS, Switched Power Supplies Cool MOS, 650V High Voltage MOS
20A 650V 150mΩ Stability And Uniformity Cool MOS For Switched Mode Power Supplies N-channel Super Junction MOSFET Part No.:LC65R190F Package:TO-220F MAIN CHARACTERISTICS ID:20A VDSS:650V RDSON-typ VGS=10V:150mΩ FEATURES • Low RDS(on) & FM • Extremely low switching loss • Excellent stability and ... Ver más
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TO-252 Montaje de superficie Semiconductor de alta potencia 5A 500V 1.33Ω Para secador de pelo
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El tiempo de entrega: 2-30days(Depends on Total Quantity)
Marca: Lingxun
Destacar:Surface Mount High Power Semiconductor, TO-252 High Power Semiconductor, 500V High Power Semiconductor
5A 500V 1.33Ω TO-252 Surface Mount High Power Semiconductor For Hairdryer N-Channel Enhancement Mode Power MOSFET Part No.:CS5N50A5 Package:TO-252 MAIN CHARACTERISTICS ID:5A VDSS:500V RDSON-typ VGS=10V: 1.33Ω FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanc... Ver más
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Semiconductor Mos de alta tensión de baja fuga para carga de pila
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Marca: Lingxun
Destacar:Cool Mos Semiconductor, Low Leakage Cool Mos, Charging Pile Cool Mos
Product Description: Voltage Low Leakage Cool Mos The Semiconductor For Power Applications This particular product is a Type N semiconductor with low junction capacitance, making it ideal for high voltage applications. Its high efficiency ensures that it can handle large amounts of current without w... Ver más
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