Procesamiento térmico rápido para aumentar la producción Sistema de recocido RTP-SA-8
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3 month
Marca: Ganova
Destacar:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... Ver más
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sistema de recocido termal rápido de 150m m con tres gases de proceso de los sistemas
Precio: Negotiable
MOQ: 1
El tiempo de entrega: 8-10week days
Marca: GaNova
Destacar:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Ver más
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El FE dopó a GaN Substrates Resistivity > 10 el ⁶ Ω·Radioinstrumentos del cm
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Ver más
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625um 675um 4 al zafiro plano azul de la pulgada LED GaN Epitaxial Wafer On Sapphire SSP
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Ver más
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C-avión Sapphire Substrate Wafer de JDCD08-001-006 6inch
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Ver más
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GaN 2 pulgadas de Nitruro de Galio Substrato de cristal único
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... Ver más
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Un solo cristal Gan Epi Wafer Nitruro de galio Substrato 4 pulgadas
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Ver más
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4 pulgadas de Nitruro de Galio GaN
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Ver más
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Dispositivo de potencia de 2 pulgadas Transistor de alta movilidad de electrones Wafer epitaxial
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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625um a 675um 4 pulgadas de LED azul nitruro de galio GaN Wafer epitaxial en zafiro SSP zafiro plano
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Ver más
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AlN 10*10mm2 AlN cristal único 400±50μM grado S/P/R
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: GaNova
Destacar:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Ver más
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2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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2 ′′ 6 pulgadas tipo N GaN en zafiro oblea epitaxial para dispositivo PIN láser LED
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 weeks
Destacar:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Ver más
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1 pulgada de oblea de cristal único AlN 400±50μM grado S/P/R
Precio: Negotiable
El tiempo de entrega: Negotiable
Marca: GaNova
Destacar:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... Ver más
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Wafer epitaxial de GaN esencial para la producción de chips de alta tensión y alta frecuencia
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 weeks
Marca: Ganova
Destacar:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Ver más
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Barrera de AlGaN 4 pulgadas de GaN en la oblea de silicio HEMT Epi de nitruro de galio GaN-en-Si
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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6 pulgadas GaN en silicio HEMT Epi Wafer dispositivo de alimentación Nitruro de galio GaN en Si
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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GaN láser violeta en el silicio 2 pulgadas GaN en el silicio HEMT Epi oblea UV LD Epi oblea
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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2 pulgadas de GaN en el silicio azul LD Epi oblea GaN láser azul en el silicio
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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LED azul GaN en oblea de silicio Oblea epitaxial láser azul GaN
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Destacar:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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