El FE dopó a GaN Substrates Resistivity > 10 el ⁶ Ω·Radioinstrumentos del cm
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Ver más
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2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía
Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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Oblea Epi GaAs
(15)
18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:18mm GaAs Si Wafer, GaAs Undoped Substrates VGF, GaAs Si Wafer 2inch
2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some d... Ver más
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JDCD05-001-004 Diamante monocristalino de grado electrónico de 3*3 mm2*0,5 mm, contenido de N
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
JDCD05-001-004 3*3mm2*0.5mm electronic grade single crystal diamond,N content Ver más
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sistema de recocido termal rápido de 150m m con tres gases de proceso de los sistemas
Precio: Negotiable
MOQ: 1
El tiempo de entrega: 8-10week days
Marca: GaNova
Destacar:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... Ver más
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Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
Precio: Negotiable
MOQ: 1
El tiempo de entrega: 8-10week days
Marca: GaNova
Destacar:Hall Effect Sensor Tester Mobility Resistivity, carrier concentration hall effect instrument, Hall Effect Sensor Tester semiconductor
Hall Coefficient Hall Effect Sensor Tester mobility resistivity measurement Product Overview: Hall effect tester is used to measure the carrier concentration, mobility, resistivity, Hall coefficient and other important parameters, and these parameters of semiconductor materials to understand the ele... Ver más
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AIN Sapphire Wafer Sapphire Single semi aislador o el lado doble pulió
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: Negotiable
Marca: GaNova
Destacar:AIN Sapphire Wafer, Semi Insulating AIN Wafer, Sapphire Wafer Single Side Polished
2 Inch Thick Film (1,2)μm AIN On Sapphire Wafer SSP XRD FWHM Of(002)≤80arcsec(102) ≤650arcsec UV Disinfection LED Chip The material is a good electrical insulator with excellent thermal conductivity. Its high insulating properties make it an excellent choice for a variety of applications. A wide var... Ver más
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94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: Negotiable
Marca: GaNova
Destacar:94um Laser Diode Chip, high power laser diode chip, 1.0W/A Laser Diode Chip
94μm Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 915nm 10W COS Diode Laser Chip On Submount Design For low power consumption it is essential that the output from the laser diode (LD) is efficiently coupled to the optical waveguide, and there are several approaches reported in the liter... Ver más
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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Destacar:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... Ver más
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Oblea Ga2O3
(13)
Sn dopaje Ga2O3 oblea sustrato monocristalino 10x10mm2
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Ver más
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oblea de silicio
(26)
JDCD07-001-001 oblea epitaxial SOI de 4 pulgadas para procesamiento MEMS
Precio: Negotiable
MOQ: 1
El tiempo de entrega: 3-4 week days
Marca: GaNova
4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... Ver más
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Sapphire Wafer
(19)
C-avión Sapphire Substrate Wafer de JDCD08-001-006 6inch
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... Ver más
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UKAS Patterned Sapphire Substrates Flat Edge Angle
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: GaNova
Destacar:UKAS Patterned Sapphire Substrates, al2o3 substrate 430um, Patterned Sapphire Substrates OEM
50.80±0.10mm Patterned Sapphire Substrates Flat Edge Angle A-Plane±0.2o 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The efficacy enhancement of GaN-based LEDs with the patterned-sapphire substrate technique is generally attributed to the improvement in both light extraction effic... Ver más
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Titular de oblea de teflón de 6 pulgadas Limpieza de cestas y manijas de flores
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Destacar:6inch Wafer Holder, wafer cassette carrier, 25 PCS Wafer Holder
6inch Wafer Holder Cleaning Flower Baskets And Handles PFA Cassette / Cassette of wafer can be customized and designed by customers’ request, able to resist strong acid, strong hydrofluoric acid, strong base and heat up to 200~220℃, use to deliver wafers in acid & base process of Fabrication f... Ver más
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0.1mm/s To 600mm/s Wafer Dicing Machine X Axis Cutting Range 260mm
Precio: Negotiable
MOQ: 1
El tiempo de entrega: 8-10week days
Marca: GaNova
Destacar:0.1mm/s Wafer Dicing Machine, wafer saw machine 260mm, 600mm/s Wafer Dicing Machine
DAD3350 Wafer Dicing Machine 0.1 ～ 600mm/s X-Axis Cutting Range 260mm Improved throughput The DAD3350 achieves improvement in throughput by increasing the speed of each axis. Ease of use Operability is improved with installation of an LCD touch screen and Graphical User Interface (GUI). Easy operati... Ver más
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