GaN Epitaxial Wafer
(69)
El FE dopó a GaN Substrates Resistivity > 10 el ⁶ Ω·Radioinstrumentos del cm
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... Ver más
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625um 675um 4 al zafiro plano azul de la pulgada LED GaN Epitaxial Wafer On Sapphire SSP
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... Ver más
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Grosor de oblea epitaxial de 5 x 10 mm2 M Face GaN 325um 375um
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... Ver más
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GaN dopado con UID tipo N de 4 pulgadas en oblea de zafiro Resistividad SSP>0,5 Ω cm LED, láser, oblea epitaxial PIN
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... Ver más
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Zafiro plano de oblea epitaxial GaN LED azul de 4 pulgadas C
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... Ver más
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Oblea epitaxial de GaN de 375 um Substratos independientes de U-GaN SI-GaN
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... Ver más
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4 pulgadas de Fe dopado GaN independiente de sustrato Nitruro de galio de sustrato
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... Ver más
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4 pulgadas de nitruro de galio de sustrato GaN independiente
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... Ver más
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Substrato GaN independiente sin dopado de 2 pulgadas
Precio: Negotiable
MOQ: 1
El tiempo de entrega: Negotiable
Marca: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... Ver más
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12.5m m 2inch N libre GaN Epi Wafer Si Doped
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... Ver más
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Pulgada GaN Epi Wafer Dimensions del grueso 370um 430um 2 50m m
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... Ver más
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Oblea epitaxial GaN de 5x10 mm2 Tipo SI no dopado
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... Ver más
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Oblea semiconductora de nitruro de galio monocristalino TTV 10um
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... Ver más
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Avión de la oblea de semiconductor del nitruro del galio 325um 375um C
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... Ver más
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5x10mm2 Sp Face Gan Epitaxial Wafer On Doped Si Tipo Gan Sustrato monocristalino
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... Ver más
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La O.N.U dopó el tipo GaN Single Crystal Substrate 5x10mm2 M Face de N
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... Ver más
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625um a 675um 4 pulgadas de LED azul nitruro de galio GaN Wafer epitaxial en zafiro SSP zafiro plano
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 week days
Marca: GaNova
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... Ver más
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GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 weeks
Marca: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Ver más
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2–6-inch N-type GaN on Sapphire Epitaxial Wafer for LED laser PIN Device
Precio: Negotiable
MOQ: 5
El tiempo de entrega: 3-4 weeks
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... Ver más
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... Ver más
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