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Oblea sic epitaxial

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China 2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía en venta

2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía

Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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China 2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía en venta

2 pulgadas GaN en la oblea de silicio HEMT Epi para el dispositivo de energía

Precio: Negotiable
MOQ: 5
El tiempo de entrega: Negotiable
Marca: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... Ver más
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China oblea sic epitaxial de 150.0m m +0mm/-0.2mm ningún plano secundario 3m m en venta

oblea sic epitaxial de 150.0m m +0mm/-0.2mm ningún plano secundario 3m m

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... Ver más
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China 47,5 milímetros de ± oblea sic epitaxial 150,0 milímetro +0mm/-0.2mm to<11-20>±1° paralelo de 1,5 milímetros en venta

47,5 milímetros de ± oblea sic epitaxial 150,0 milímetro +0mm/-0.2mm to<11-20>±1° paralelo de 1,5 milímetros

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... Ver más
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China 4H oblea sic epitaxial ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 milímetro +0mm/-0.2mm en venta

4H oblea sic epitaxial ≤0.2 /cm2 0.015Ω•cm-0.025Ω•cm 150,0 milímetro +0mm/-0.2mm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... Ver más
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China 4H oblea sic epitaxial 0.015Ω•cm-0.025Ω•² 150,0 milímetro +0mm/-0.2mm del cm ≤4000/cm en venta

4H oblea sic epitaxial 0.015Ω•cm-0.025Ω•² 150,0 milímetro +0mm/-0.2mm del cm ≤4000/cm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... Ver más
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China Sustrato de SiC de nivel P de 2 pulgadas para dispositivos de potencia y dispositivos de microondas en venta

Sustrato de SiC de nivel P de 2 pulgadas para dispositivos de potencia y dispositivos de microondas

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... Ver más
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China Sustrato SiC de 2 pulgadas de 350 μm para electrónica de potencia exigente en venta

Sustrato SiC de 2 pulgadas de 350 μm para electrónica de potencia exigente

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... Ver más
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China 0.015Ω•cm-0.025Ω•CMP polaco óptico de la Si-cara de la C-cara sic epitaxial de la oblea del cm en venta

0.015Ω•cm-0.025Ω•CMP polaco óptico de la Si-cara de la C-cara sic epitaxial de la oblea del cm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:SiC Epitaxial Wafer C-Face, Optical Polish sic wafer, Si-Face CMP Sic Epitaxial Wafer
0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP Overview A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. T... Ver más
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China nivel P del sustrato de carburo de silicio de 260 μm para dispositivos de potencia y dispositivos de microondas en venta

nivel P del sustrato de carburo de silicio de 260 μm para dispositivos de potencia y dispositivos de microondas

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:260um silicon carbide substrate, Power Devices Epitaxial Wafer, silicon carbide substrate P Level
4H-N/SI260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview We contribute to the SiC success story by developing and manufacturing market-leading quality SiC subs... Ver más
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China Politipo Ninguno permitido SiC Epitaxial Wafer P-MOS P-SBD Grado D en venta

Politipo Ninguno permitido SiC Epitaxial Wafer P-MOS P-SBD Grado D

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:SiC Epitaxial Wafer P-MOS, D Grade silicon epi wafer, SiC Epitaxial Wafer P-SBD
JDCD03-001-004 Sic Epitaxial Wafer P-MOS P-SBD D Grade Polytype None Permitted JDCD03-001-004 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to... Ver más
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China Sustrato epitaxial de la oblea de SiC de la oblea de 4H SiC para los dispositivos fotónicos ISO9001 en venta

Sustrato epitaxial de la oblea de SiC de la oblea de 4H SiC para los dispositivos fotónicos ISO9001

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:SiC Epitaxial Wafer Photonic Devices, 4H 2 inch wafer, SiC Epitaxial Wafer ISO9001
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making semiconductor and photonic devices such as light-emitting diodes (LEDs). Several methods... Ver más
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China 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave en venta

4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... Ver más
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China Sustrato 4H-SiC de 4 pulgadas Nivel P Tipo N 350,0±25,0 μM MPD≤0,5/Cm2 Resistividad 0,015 Ω•Cm—0,025 Ω•Cm en venta

Sustrato 4H-SiC de 4 pulgadas Nivel P Tipo N 350,0±25,0 μM MPD≤0,5/Cm2 Resistividad 0,015 Ω•Cm—0,025 Ω•Cm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to... Ver más
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China Sustrato 4H-SiC de 4 pulgadas Nivel P SI 500,0±25,0 μM MPD≤0,3/Cm2 Resistividad ≥1E9Ω·Cm para alimentación y microondas en venta

Sustrato 4H-SiC de 4 pulgadas Nivel P SI 500,0±25,0 μM MPD≤0,3/Cm2 Resistividad ≥1E9Ω·Cm para alimentación y microondas

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher therm... Ver más
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China P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm en venta

P MOS Grade 2 Inch SiC Epi Wafer P Level P SBD Grade D Grade 150.0mm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:P-MOS Grade SiC Epi Wafer, 150.0mm SiC Substrate, SiC Epi Wafer P Level
P-MOS Grade 2-Inch SiC Substrate P-Level P-SBD Grade D Grade 150.0 mm +0mm/-0.2mm JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview At the system level, this results in highly compact solutions with vastly improved energy efficiency at red... Ver más
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China Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP en venta

Single Crystal SiC Epitaxial Wafer C-Face Optical Polish Si-Face CMP

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:SiC Epitaxial Wafer C-Face, Silicon Carbide Epitaxial Wafers, CMP SiC Epitaxial Wafer
JDCD03-001-004 SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face:CMP Overview It involves the growth of crystals of one material on the crystal face of another (heteroepitaxy) or the same (homoepitaxy) material. The lattice structure and orientation or lattice symmetry of the thin film material is i... Ver más
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China Sustrato tipo N SiC 4H de 6 pulgadas, 47,5 mm, sin plano secundario en venta

Sustrato tipo N SiC 4H de 6 pulgadas, 47,5 mm, sin plano secundario

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:SiC N Type Substrate, 6inch SiC Wafer, 4H N Type substrate
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial... Ver más
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China 2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices en venta

2 Inch Semiconductor Wafer P Level 260μm For Power Devices Microwave Devices

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:2 Inch semiconductor wafer, Microwave Devices semiconductor wafer, Semiconductor Wafer P Level
JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide (SiC) make it ideally suited for advanced high-power and high-frequency semiconductor devices that operate well beyond the ca... Ver más
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China Sin sustrato de SiC plano secundario 150,0 mm 47,5 mm en venta

Sin sustrato de SiC plano secundario 150,0 mm 47,5 mm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:No Secondary Flat SiC Substrate, 47.5mm semiconductor wafer, SiC Substrate 150.0mm
2-Inch SiC Substrate 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm No Secondary Flat JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Our relentless focus on continuously improving materials quality and increasing substrate diameters directly ben... Ver más
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