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Oblea Ga2O3

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China Sn dopaje Ga2O3 oblea sustrato monocristalino 10x10mm2 en venta

Sn dopaje Ga2O3 oblea sustrato monocristalino 10x10mm2

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... Ver más
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China Sola Ga2O3 oblea pulida lateral solo Crystal Substrate en venta

Sola Ga2O3 oblea pulida lateral solo Crystal Substrate

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... Ver más
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China 0.6m m 0.8m m Ga2O3 solo Crystal Substrate Single Polishing en venta

0.6m m 0.8m m Ga2O3 solo Crystal Substrate Single Polishing

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... Ver más
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China JDCD04-001-007 10x10mm2(010) Sustrato de cristal único Ga2O3 independiente dopado con Sn Pulido único de grado de producto en venta

JDCD04-001-007 10x10mm2(010) Sustrato de cristal único Ga2O3 independiente dopado con Sn Pulido único de grado de producto

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... Ver más
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China Ra 0.3nm Ga2O3 Single Crystal Oblea epitaxial 2 pulgadas 4 pulgadas en venta

Ra 0.3nm Ga2O3 Single Crystal Oblea epitaxial 2 pulgadas 4 pulgadas

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Ga2O3 epitaxial wafer 2 Inch, Single Crystal Substrate 4 Inch, single crystal epitaxial wafer
Ra≤0.3nm Single Crystal Substrate Thickness 0.6~0.8mm Orientation (-201) 10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filt... Ver más
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China Grueso monocristalino de sustrato de Ga2O3 pulido de un solo lado 0,6 mm 0,8 mm en venta

Grueso monocristalino de sustrato de Ga2O3 pulido de un solo lado 0,6 mm 0,8 mm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:side polished Ga2O3 Substrate, 0.8mm Gallium Oxide substrate, Ga2O3 Substrate Single Crystal
Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 2.00E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor m... Ver más
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China FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm en venta

FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6mm To 0.8mm

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Ga2O3 Wafer 0.6mm, single crystal substrate 0.8mm, Ga2O3 Wafer 0.8mm
FWHM Ver más
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China Situación libre libre del sustrato 10x10mm2 del solo cristal de la oblea dopada con Fe Ga2O3 en venta

Situación libre libre del sustrato 10x10mm2 del solo cristal de la oblea dopada con Fe Ga2O3

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Ga2O3 Fe Doped Wafer, Single crystal Ga2O3 substrate, Fe Doped Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-... Ver más
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China Semiconductor Single Crystal Gallium Oxide Substrate UID Doping en venta

Semiconductor Single Crystal Gallium Oxide Substrate UID Doping

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:Single Crystal Gallium Oxide substrate, semiconductor wafer ISO, Gallium Oxide substrate UID Doping
Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM Ver más
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China JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing en venta

JDCD04-001-002 10x10mm2 (-201) Sn-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Resistance Ver más
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China JDCD04-001-003 10x10mm2 100(Off 6°) Sustrato monocristalino de Ga2O3 independiente dopado con Fe Pulido simple de grado de producto en venta

JDCD04-001-003 10x10mm2 100(Off 6°) Sustrato monocristalino de Ga2O3 independiente dopado con Fe Pulido simple de grado de producto

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Power density is greatly improved in gallium nitride devices compar... Ver más
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China 10x15mm2 UID dopado independiente Ga2O3 Wafer solo pulido en venta

10x15mm2 UID dopado independiente Ga2O3 Wafer solo pulido

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:10x15mm2 Ga2O3 Wafer, UID Doped Ga2O3 Substrate, Ga2O3 Wafer Single Polishing
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic ... Ver más
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China oblea Ga2O3 10x15m m de 10x10m m solo Crystal Substrate en venta

oblea Ga2O3 10x15m m de 10x10m m solo Crystal Substrate

Precio: Negotiable
MOQ: Negotiable
El tiempo de entrega: 3-4 week days
Marca: GaNova
Destacar:10x10mm Ga2O3 Wafer, 10x15mm single crystal wafer, Ga2O3 Wafer 10x15mm
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters With increased energy efficiency, smaller req... Ver más
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